Fabrication and characterization of quantum wells for the study of light-matter interaction

Fabrication and characterization of quantum wells for the study of light-matter interaction

Quantum Wells are the basis for a great variety of electronic devices such as leds, lasers, photodetectors and modulators. Their optoelectronic properties depend on their chemical composition and the thickness of each layer. Therefore, a precise control during their growth is needed. This work has t...

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Main Authors: Tapia-Rodríguez, Lucy Estefanía, Guevara-Macías, Liliana Estela, Lastras-Martínez, Alfonso, Lastras-Martínez , Luis Felipe
Format: Online
Language:spa
Published: Universidad Autónoma de Tamaulipas 2023
Online Access:https://revistaciencia.uat.edu.mx/index.php/CienciaUAT/article/view/1737
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id oai:ojs.pkp.sfu.ca:article-1737
record_format ojs
institution CIENCIA UAT
collection OJS
language spa
format Online
author Tapia-Rodríguez, Lucy Estefanía
Guevara-Macías, Liliana Estela
Lastras-Martínez, Alfonso
Lastras-Martínez , Luis Felipe
spellingShingle Tapia-Rodríguez, Lucy Estefanía
Guevara-Macías, Liliana Estela
Lastras-Martínez, Alfonso
Lastras-Martínez , Luis Felipe
Fabrication and characterization of quantum wells for the study of light-matter interaction
author_facet Tapia-Rodríguez, Lucy Estefanía
Guevara-Macías, Liliana Estela
Lastras-Martínez, Alfonso
Lastras-Martínez , Luis Felipe
author_sort Tapia-Rodríguez, Lucy Estefanía
title Fabrication and characterization of quantum wells for the study of light-matter interaction
title_short Fabrication and characterization of quantum wells for the study of light-matter interaction
title_full Fabrication and characterization of quantum wells for the study of light-matter interaction
title_fullStr Fabrication and characterization of quantum wells for the study of light-matter interaction
title_full_unstemmed Fabrication and characterization of quantum wells for the study of light-matter interaction
title_sort fabrication and characterization of quantum wells for the study of light-matter interaction
description Quantum Wells are the basis for a great variety of electronic devices such as leds, lasers, photodetectors and modulators. Their optoelectronic properties depend on their chemical composition and the thickness of each layer. Therefore, a precise control during their growth is needed. This work has the objective of presenting the epitaxial growth of coupled and uncoupled asymmetric AlGaAs/GaAs/AlGaAs quantum wells and their characterization using optical techniques such as reflectance anisotropy spectroscopy (RAS) and photoluminescence (PL). An experimental study of the different interactions between the confined levels of energy in coupled quantum wells was carried on. This kind of structures is of special interest because they allow the formation and observation not only of direct excitons and trions inside a single quantum well, but of indirect excitons and trions, which are only formed by electrons of one quantum well and holes of the neighbor quantum well (Intra-QW transitions). Three intrinsic quantum wells based on gallium arsenide (GaAs) were grown bymolecular beam epitaxy (MBE), one single QW and a pair of coupled asymmetric QWs. The effect of breaking symmetry (from de D2d a C2v) on the spintronic properties of the structure was observed by RAS and PL measurements at ~ 30 K. The main techniques and methods for the growth of intrinsic quantum wells were established, which are the basis for the creation of devices with more complex structures. The use of spectroscopic techniques for the study of quantum wells allowed the demonstration of the presence of optical anisotropies that influence the behavior of exciton’s spins at quantum wells.
publisher Universidad Autónoma de Tamaulipas
publishDate 2023
url https://revistaciencia.uat.edu.mx/index.php/CienciaUAT/article/view/1737
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spelling oai:ojs.pkp.sfu.ca:article-17372023-02-02T15:13:03Z Fabrication and characterization of quantum wells for the study of light-matter interaction Fabricación y caracterización de pozos cuánticos para el estudio de la interacción luz-materia Tapia-Rodríguez, Lucy Estefanía Guevara-Macías, Liliana Estela Lastras-Martínez, Alfonso Lastras-Martínez , Luis Felipe pozo cuántico espectroscopía excitones quantum well spectroscopy excitons Quantum Wells are the basis for a great variety of electronic devices such as leds, lasers, photodetectors and modulators. Their optoelectronic properties depend on their chemical composition and the thickness of each layer. Therefore, a precise control during their growth is needed. This work has the objective of presenting the epitaxial growth of coupled and uncoupled asymmetric AlGaAs/GaAs/AlGaAs quantum wells and their characterization using optical techniques such as reflectance anisotropy spectroscopy (RAS) and photoluminescence (PL). An experimental study of the different interactions between the confined levels of energy in coupled quantum wells was carried on. This kind of structures is of special interest because they allow the formation and observation not only of direct excitons and trions inside a single quantum well, but of indirect excitons and trions, which are only formed by electrons of one quantum well and holes of the neighbor quantum well (Intra-QW transitions). Three intrinsic quantum wells based on gallium arsenide (GaAs) were grown bymolecular beam epitaxy (MBE), one single QW and a pair of coupled asymmetric QWs. The effect of breaking symmetry (from de D2d a C2v) on the spintronic properties of the structure was observed by RAS and PL measurements at ~ 30 K. The main techniques and methods for the growth of intrinsic quantum wells were established, which are the basis for the creation of devices with more complex structures. The use of spectroscopic techniques for the study of quantum wells allowed the demonstration of the presence of optical anisotropies that influence the behavior of exciton’s spins at quantum wells. Los pozos cuánticos representan la base de una gran variedad de dispositivos electrónicos, entre ellos los ledes, láseres, fotodetectores y moduladores. Las propiedades optoelectrónicas de estos sistemas dependen de su composición química y del espesor de las capas crecidas. Por dicha razón, es necesario tener un control preciso durante su crecimiento. El presente trabajo tuvo como objetivo inducir el crecimiento epitaxial de pozos cuánticos intrínsecos (sin ningún dopaje) asimétricos acoplados y desacoplados de AlGaAs/GaAs/AlGaAs, así como, establecer su caracterización mediante técnicas de espectroscopía óptica, como lo son la reflectancia diferencial, también conocida como espectroscopía de reflectancia anisotrópica (RAS) y la fotoluminiscencia (PL). Se realizó un estudio experimental de las interacciones entre niveles de energía en los pozos cuánticos asimétricos acoplados. Este tipo de estructuras son especialmente interesantes por permitir la formación y observación, no solo de excitones directos, dentro del mismo pozo, sino también, de excitones y triones indirectos, que se forman entre electrones de un pozo y huecos de otro pozo vecino (Transiciones intra-QW). Se hicieron crecer tres pozos intrínsecos, basados en arseniuro de galio (GaAs): un pozo individual (desacoplado) y un par de pozos asimétricos acoplados, a través de epitaxia por haces moleculares (MBE). Se observó el efecto del rompimiento de simetría (de D2d a C2v) en las propiedades espintrónicas de la estructura, a través de PL y RAS, a una temperatura de ~ 30 K. Se lograron establecer las técnicas y métodos necesarios para el crecimiento de pozos cuánticos intrínsecos, que constituyen la base para la creación de dispositivos y estructuras más complejas. El uso de técnicas espectroscópicas permitió demostrar la presencia de anisotropías ópticas, que repercuten en el comportamiento del espín de los excitones en pozos cuánticos. Universidad Autónoma de Tamaulipas 2023-01-31 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion application/pdf text/html text/xml https://revistaciencia.uat.edu.mx/index.php/CienciaUAT/article/view/1737 10.29059/cienciauat.v17i2.1737 CienciaUAT; Vol 17 No. 2. January-June 2023; 06-23 CienciaUAT; Vol. 17 No. 2: Enero-Junio 2023; 06-23 2007-7858 2007-7521 spa https://revistaciencia.uat.edu.mx/index.php/CienciaUAT/article/view/1737/1031 https://revistaciencia.uat.edu.mx/index.php/CienciaUAT/article/view/1737/1022 https://revistaciencia.uat.edu.mx/index.php/CienciaUAT/article/view/1737/1040 Derechos de autor 2022 Universidad Autónoma de Tamaulipas https://creativecommons.org/licenses/by-nc-sa/4.0

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